- Buyers Guide
Military Microwaves Supplement
Small Silicon Bipolar Transistors
The M03 series three-pin, flat lead packages are designed for the NPN series silicon transistors. The package has an overall footprint of 1.4 x 1.4 mm, which represents a size reduction of over 40 percent. Several low noise NPN silicon transistors with fTs of 4.5 to 12 GHz are now available in these small packages. Price: 18¢ (100,000).
California Eastern Laboratories,
Santa Clara, CA
Variable Capacitance Diodes
The KV18XX series variable capacitance diodes are designed for use in low power communications equipment. The diodes are available immediately in reverse-voltage ranges of 1, 4, 6, 8, 10 and 25 V in either a two- or three-pin package and operate over a -50° to +105°C temperature range. All devices feature a large capacitance ratio and capacitance that is linear to the reverse-voltage range. Typical applications include use in cellular telephones, toys, test equipment, hearing aids, keyless entry systems and video cameras. Price: 30¢ each.
Toko America Inc.,
Mount Prospect, IL
12 - 16 GHz LNA
The model CHA2066 two-stage, wideband monolithic low noise amplifier (LNA) operates over the 12 to 16 GHz frequency range. The unit has a gain of 16 dB and noise figure of 2 dB throughout the frequency range. The LNA is available in chip form.
United Monolithics Semiconductors SAS,
Orsay Cedex, France
10 Microamp - 20 mA Voltage References
The LM385 series bandgap voltage references are supplied in an SOT-23 package and feature supply currents down to 10 microamps. The model LM385-1.2 reference spans the 10 microamp to 20 mA current range at a 1.2 V output while the model LM385-2.5 reference operates between 20 microamps to 20 mA at a 2.5 V output. In addition, the units feature low dynamic impedance of 0.6 W (max) and good temperature stability between 0° to +70°C. A wide dynamic operating range assures good regulation when the references are used with widely varying supplies. When used with portable meters, regulators or general-purpose analog circuitry, the units help conserve battery life to approximate shelf-life ratings.
National Semiconductor Corp.,
Santa Clara, CA
Isolated-collector Silicon Bipolar Junction Transistors
The models HBFP-0405 and HBFP-0420 high performance transistors can be used as amplifiers in wireless communications systems and other applications operating in related frequency bands from 900 GHz to approximately 2.5 GHz and as oscillators through 9 or 12 GHz. At 1.8 GHz, the HBFP-0405, which is optimized for low current operation at 2 mA with a 2 V bias, provides a minimum noise figure of 1.2 dB and associated gain of 18 dB. With a 5 mA bias, the unit provides +5 dBm output power. With a bias of 5 mA at 2 V, the HBFP-0420 provides a minimum noise figure of 1.1 dB and associated gain of 17 dB. With a 20 mA bias, the transistor provides +12 dBm output power at 1.8 GHz. Price: 44¢ each for the model HBFP-0405; 46¢ each for the model HBFP-0420 (10,000).
Palo Alto, CA
(800) 537-7715, ext. 10005.
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