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200 W Class AB Power Amplifier
The model 30-2-200-45 200 W class AB power amplifier operates from 1 to 30 MHz and is housed in a compact package (6" x 2" x 1") or as a full 19" rack-mount system. Module connectors are SMA female and rack-mount connectors are type N female. The amplifier is designed for airborne communications, radar, missiles, and portable, mobile and general-purpose applications. The unit features gain of 45 dB, efficiency of 40 percent and an input/output impedance of 50 W (nom). The operating temperature is from –50° to +70°C.
100 W GSM High Power Amplifier
The model HPA1920-100 high power amplifier covers the 1930 to 1990 MHz frequency range. GSM mask requirements are met through the use of the company’s linearization techniques. Each unit incorporates remote status monitoring of designated parameters and critical operating conditions. In addition, the unit includes both input overcurrent and over-temperature shutdown. The unit can be used in fixed and mobile base stations and wireless local loop (WLL) systems. Size: 12.50" x 2.85" x 8.50". Operating temperature range is from 0° to 50°C baseplate and operating voltage is 25 to 26 V DC.
MPD Technologies Inc., a subsidiary of Microwave Power Devices Inc.,
The PL series solid-state power amplifiers are designed for use in communications systems operating in C-, X- and Ku-bands. The amplifiers use GaAs MMIC technology to ensure compact size and low cost. They are available in low and high power versions, and typically provide 40 and 42 dBm of output power at 1 dB gain compression. Small-signal gain is temperature compensated and adjustable from 36 to 48 dB. An optional switching-mode power supply unit is available enabling the amplifiers to operate from a wide range of supply voltages. The amplifier and power supply unit are suited for exact replacement of TWT amplifiers and power supply units in existing terrestrial communications systems.
Plessey Microwave & RF Products,
Tokai, South Africa
High Linearity LNA
The model RF2442 GaAs heterojunction bipolar transistor (HBT) low noise amplifier (LNA) is designed for the receive front end of digital cellular applications at 900, 1900 and 2400 MHz. The unit is designed to amplify low level signals with minimum noise contribution while operating in the environments of newly deployed digital subscriber units. Manufactured using advanced GaAs HBT process technology, the LNA also functions as a PA driver amplifier in the transmit chain of digital subscriber units where low transmit noise power is a concern. The unit operates from 500 to 2500 MHz and is supplied in an new standard miniature eight-lead plastic MSOP package. Delivery: stock. Price: less than $1 per unit.
RF Micro Devices Inc.,
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