RFMW Ltd. announces design and sales support for TriQuint’s TGM3015-SM, a 3 x 3 mm QFN packaged GaN transistor offering 10 W P3dB. Linear power gain is up to 17.1 dB within the 0.03 to 3.0 GHz bandwidth of this device.
PAE3dB of the TGM3015-SM is >62% which typifies TriQuint GaN efficiency. Operating from a 32 V source, the TriQuint TGM3015-SM is input matched to 50 ohms and serves applications in land mobile radio, radar and test instrumentation.
