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Industry News

AMPLIFIERS

April 1, 1998
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AMPLIFIERS

Multiband High Power Linear Amplifier System
The model BHE27258-300 linear amplifier system operates from 20 to 2500 MHz with a maximum output power of 300 W. Powered by a common single-phase power supply, the three separate bands (20 to 500 MHz, 500 to 1000 MHz and 1000 to 2500 MHz) can be activated remotely to provide 200, 300 and 50 W, respectively. Intermodulation distortions from –24 to –30 dBc are realized utilizing GaAs FET and LDMOS technologies. High speed noise quieting is included. The operating temperature range is from 0° to +50°C. Size: 15.75" x 19.00" x 0.26".
Comtech PST Corp.,
Melville, NY
(516) 777-8900.

100 W VHF/UHF Broadband High Power Amplifier
The model 250-30-100-35A3 class AB power amplifier operates from 30 to 250 MHz. The rugged broadband module is provided in a small, compact package (6" x 2" x 1") or as a full rack-mount system (19"). The unit features ultra-high efficiency and low harmonic output. Connectors are SMA female. Features include an output power of 100 W CW or pulsed power, frequency range of 30 to 250 MHz and gain of 10 to 35 dB. DC supply/current is 28 V DC/7 A (module) or 120/230 V AC/7 A (system). Operating temperature ranges from –50° to +170°C.
LCF Enterprises,
Camarillo, CA
(805) 388-8454.

Broadband Connectorized Amplifier
The model ZFL-2500VH broadband connectorized amplifier is designed for a variety of instrumentation, communication and lab applications in the 10 to 2500 MHz range. This unconditionally stable amplifier provides 24 dBm (min) power output, high 20 dB (min) gain and low 5.5 dB (typ) noise figure. The amplifier is designed to operate in 50 W environments at a maximum temperature range of –20° to +71°C. Price: $264.95 each (qty. 1–9). Delivery: stock to one week.
Mini-Circuits,
Brooklyn, NY
(718) 934-4500.

Cryogenically Cooled Amplifier
The CLNA series self-contained, cryogenically cooled amplifiers allow the user to incorporate a specific LNA and the company’s new cryogenic cooler for operation near liquid nitrogen temperatures. The unit is small, compact and relatively lightweight and operates off of 110 or 220 V AC. The internal amplifier is available at various frequencies and gains from 1 to 20 GHz with noise figures in the order of tenths of a decibel.
MITEQ,
Hauppauge, NY
(516) 439-9413.

35 W RF Power Amplifier
The model QBS-950 35 W code-division multiple access (CDMA) power amplifier operates over the 1930 to 1990 MHz frequency band with a gain of 45.5 +/-1 dB. Operating at a 35 W CDMA output, spectral regrowth is –45 dBc at 885 kHz offset when measured in a 30 kHz bandwidth. The amplifier operates from a +23 to +30 V supply and draws a maximum of 13 A at 27 V DC. RF input, output and DC connections are made via a combination D-Sub connector. An optional complete alarming capability includes antenna SWR, temperature, output power and TTL open-collector interfaces. Operation over any band in the 1800 to 2000 MHz frequency range can be provided.
Q-bit, a subsidiary of REMEC,
San Diego, CA
(800) 226-1772, ext. 247.

High Linearity Low Noise GaAs HBT Amplifier
The model RF2442 high linearity LNA is designed for the receive front end of digital cellular applications at 900, 1900 and 2400 MHz, including low level signal amplification in the interference-rich environments of newly deployed digital subscriber units. The component supports numerous trade-offs between linearity and current drain that designers control completely with the choice of an external bias resistor. The unit has been manufactured using advanced GaAs heterojunction bipolar transistor (HBT) process technology. The model also functions as a PA driver amplifier in the transmit chain of digital subscriber units where low transmit noise is a concern.. The LNA operates over a frequency range of 500 to 2500 MHz. Delivery: stock. Price: less than $1 each.
RF Micro Devices,
Greensboro, NC
(910) 664-1233.

35 - 45 GHz Low Noise PHEMT Amplifier
The model ALH208C two-stage, self-biased pseudomorphic high electron mobility transistor (PHEMT) LNA operates over the 35 to 45 GHz frequency band. Typical noise figure is 3.5 dB with associated linear gain of 12 dB and 1 dB compression point of +10 dBm. The balanced design topology provides unconditional stability, as well as input and output SWR in the order of 1.5. The LNA MMIC is designed for broadband receivers and transceivers in point-to-point and point-to-multipoint communications systems. The unit is a fully passivated device that operates from a single +5 V power supply.
TRW GaAs Telecom Products,
Redondo Beach, CA
(310) 812-4321.

Transimpedance Amplifier
The model ATA01504 GaAs automatic gain control (AGC) amplifier allows designers to use multiple input, output and VDD connections, providing greater flexibility in die-bonding configurations. The amplifier is sold in die form, enabling designers to work in a TO-46-type header. PIN-TIA manufacturers can optimize performance by assembling the unit and photodiode together inside a TO header. The AGC TIA is not limited to TO-header applications. The amplifier features low noise, –38 dBm or better optical sensitivity, AGC, single +5 V power supply, 0 dBm optical overload (typ) and wide dynamic range. Price: $6 (10,000).
ANADIGICS Inc.,
Warren, NJ
(908) 668-5000.

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