Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz. The new 40 W CGHV60040D and 170 W CGHV60170D represent the only 50 V bare GaN HEMT die available on the market and are now available for purchase. A 50 V, 20 W die rated for up to 6GHz operation and a 50 V, 320 W die rated for 4 GHz operation are scheduled for release by the end of this calendar year.
Cree’s new 0.4 um, 50 V GaN HEMT die offer hybrid amplifier designers higher gain and efficiency while operating over a broad, instantaneous frequency bandwidth, providing a unique to alternative to silicon (Si) and gallium arsenide (GaAs) technologies. Exhibiting 17 dB typical small signal gain at 6GHz and 18dB typical small signal gain at 4 GHz, in addition to 65 percent typical power added efficiency, the new 50 V, 40 and 170 W GaN HEMT die are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications.
Cree’s new family of 50 V GaN HEMT die are supplied in Gel-Pak® Vacuum Release™ trays, a non-tacky membrane that immobilizes the components to ensure damage-free transportation and storage. The order multiple for the newly released products is 10 GaN HEMT die per Gel-Pak tray. For assembly information, please download the Eutectic Die Bond Procedure application note at http://www.cree.com/RF/Document-Library.
For more information about the new 50 V, 40 W CGHV60040D and 50 V, 170 W CGHV60170D GaN HEMT die, please visit http://www.cree.com/RF/Products/General-Purpose-Broadband-Die-50-V/Discrete-Bare-Die/CGHV60040D and http://www.cree.com/RF/Products/General-Purpose-Broadband-Die-50-V/Discrete-Bare-Die/CGHV60170D to access product datasheets.