Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. Cree GaN HEMTs also offer greater power density and wider bandwidths than competing Si and GaAs technologies.
The 8W CGH60008D, 15W CGH60015D, 30W CGH60030D, 60 W CGH60060D, and 120 W CGH60120D GaN HEMT die all exhibit 12 dB typical small signal gain at 6 GHz and 28 V operation and are ideal for use in broadband amplifiers, cellular infrastructure, test instrumentation, two-way private radios, and Class A and AB linear amplifiers suitable for OFDM, CDMA, W-CDMA, and EDGE waveforms. The 8 W transistor die is also capable of 5 W typical PSAT performance at 20 V operation, and the 60 W and 120 W die can also exhibit 13 dB typical small signal gain at 4 GHz.
The 6 W CGHV1J006D and 25 W CGHV1J025D GaN HEMT die exhibit 17 dB typical small signal gain and 60 percent typical power-added efficiency (PAE) at 10 GHz and 40 V operation, making them ideal for a wide range of applications operating from 10 MHz to 18 GHz at voltages ranging from 20 to 40 V. Applications for which the 6 and 25 W high frequency die are particularly well suited include: satellite communications, point-to-point communications links, marine and pleasure craft radar, port vessel traffic services, and broadband and high efficiency amplifiers.
All seven new GaN HEMT die are supplied in Gel-PakVacuum Release™ trays, a non-tacky membrane that immobilizes the components to ensure damage-free transportation and storage. The order multiple for the newly released products is 10 GaN HEMT die per Gel-Pak tray. For assembly information, please download the Eutectic Die Bond Procedure application note at http://www.cree.com/RF/Document-Library.