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DC - 4 GHz HBT GaAs MMIC Amplifier
The model AHB107 monolithic heterojunction bipolar transistor (HBT) Darlington amplifier is designed for use as a general-purpose 50 W gain block. External DC blocking capacitors determine low frequency response and an external bias resistor provides bias voltage flexibility. Features include an operating frequency of DC to 4 GHz, gain of 20 dB at 1 GHz, P1dB of 20 dBm at 1 GHz, IP3 of 36 dBm at 1 GHz and noise figure of 4.5 to 5 dB. The amplifier is available in either a chip (model AHB107C) or metal package (model AHB107P) configuration. Packaged parts are available with flat leads or hermetic options.
FEI Communications Inc., a subsidiary of Frequency Electronics Inc.,
Mitchel Field, NY (516) 794-4500.
Cellular Band LNA
These unconditionally stable cellular band low noise amplifiers (LNA) are designed for use at cryogenic temperatures, realizing an improvement in noise figure of 0.1 dB for every 50° K decrease in temperature. All of the amplifiers include SMA removable connectors and can be used for drop-in design. For the model JCA01-2140 amplifier, the frequency range is 872 to 917 MHz; gain is 26 dB (min), 30 dB (max); noise figure is 1 dB (max), 0.8 dB (typ) at 23°C and 0.5 dB (typ) at 100° K; input/output SWR is 1.5 (max); and DC power is 5 V DC at 100 mA (typ).
JCA Technology Inc.,
Camarillo, CA (805) 445-9888.
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