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Industry News / RFIC Channel

Cree introduces highest power and frequency plastic packaged GaN transistors

May 16, 2014
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Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.

Based on Cree's proven 40V, 0.25 µm gate length high frequency process, Cree® GaN DFN transistors deliver twice the PSAT efficiency and transistor gain of GaAs IMFETs in a package size that is nearly 20 times smaller at comparable power levels and frequencies. In high capacity microwave data links used in enterprise, point-to-point and airborne communication networks, the new transistors extend the communication range while delivering twice the linear efficiency of GaAs-based amplifiers. This higher efficiency gives RF designers the flexibility needed to reduce amplifier size and weight, creating tremendous savings in operating and total lifecycle costs.

"For years, commercial microwave radar transmitters have been plagued with the compromised field life of tube-based amplifiers that carry significant maintenance costs. Historically, high capacity data links were limited to the use of inefficient GaAs IMFETs," said Tom Dekker, director of RF sales and marketing, Cree, Inc. "By delivering superior efficiency and power capabilities at an affordable price, our new GaN DFN transistors enable for the first time the replacement of these legacy technologies in lower power, cost-sensitive commercial systems."

The new DFN devices also make excellent drivers for Cree's popular CGHV96100 and CGHV96050F2 fully-matched FETs for X-Band, enabling the output and drive stage transistors to operate from the same voltage rail. This allows convenient, regulated power distribution to economize board space compared with a mixed voltage transistor line up.

Samples and reference designs for C- and X-Band are available now utilizing the CGHV1F006S (6W) and CGHV1F025S (25W) GaN DFN transistors. Large signal models are also available for Agilent’s ADS and AWR Microwave Office simulators.

Visit  www.cree.com/affordableGaN for more product information, or stop by Cree’s booth (#433) at the International Microwave Symposium, June 1 – 6 in Tampa Bay, Fla.

Recent Articles by Cree Inc.

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