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Aethercomm model number SSPA 16.0-18.0-50 is a high power, broadband, GaN RF amplifier that operates from 16 to 18 GHz. This GaN microwave amplifier operates at a base plate temperature of –40° to +55°C for maximum performance. It is packaged in a modular housing that is 8.50(w)" by 3.50(l)" by 1.38(h)". This amplifier has a typical P3dB of 50 W at room temperature. Noise figure at room temperature is 12 dB typical. It offers a typical power gain of 50 dB with a typical gain flatness of ±1.0 dB. Input and output VSWR is 2.0:1 maximum.Class-AB quiescent current is 6.0 A typical, employing a +26 V DC supply. Second harmonics are less than -40 dBc and spurious emissions are less than -60 dBc.
The SSPA includes an external DC blanking command that enables and disables the module in less than 20.0 µsec. A logic low or open circuit commands the PA OFF. A logic high commands this amplifier ON. Standard features include over/under voltage protection and reverse polarity protection. Input and output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector.
This is an example of an Aethercomm standard product. Aethercomm designs and manufactures high performance, high power CW or pulsed SSPAs for commercial, military and satellite communications customers.
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