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High Power Pulsed or CW 16 to 18 GHz Amplifier

May 12, 2014
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Aethercomm model number SSPA 16.0-18.0-50 is a high power, broadband, GaN RF amplifier that operates from 16 to 18 GHz. This GaN microwave amplifier operates at a base plate temperature of –40° to +55°C for maximum performance. It is packaged in a modular housing that is 8.50(w)" by 3.50(l)" by 1.38(h)". This amplifier has a typical P3dB of 50 W at room temperature. Noise figure at room temperature is 12 dB typical. It offers a typical power gain of 50 dB with a typical gain flatness of ±1.0 dB. Input and output VSWR is 2.0:1 maximum.Class-AB quiescent current is 6.0 A typical, employing a +26 V DC supply. Second harmonics are less than -40 dBc and spurious emissions are less than -60 dBc.

The SSPA includes an external DC blanking command that enables and disables the module in less than 20.0 µsec. A logic low or open circuit commands the PA OFF. A logic high commands this amplifier ON. Standard features include over/under voltage protection and reverse polarity protection. Input and output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector.

This is an example of an Aethercomm standard product. Aethercomm designs and manufactures high performance, high power CW or pulsed SSPAs for commercial, military and satellite communications customers.

Aethercomm Inc.,
Carlsbad, CA
(760) 208-6002(760) 208-6002,
www.aethercomm.com

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