Richardson RFPD introduces two ka-band GaN on SiC power amplifiers from TriQuint
Richardson RFPD Inc. announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.
The Ka-band GaN amplifiersare fabricated on TriQuint’s proprietary 0.15μm GaN on SiC process. Covering 27 to 31 GHz and featuring excellent linearity, the PAs are ideally-suited to support both commercial and defense-related satellite communications.
The two GaN amplifiers offer overall Ka-band performance at levels not achieved with existing GaAs technologies. This allows system designers the flexibility to improve system performance, reduce costs, and realize next-generation requirements.
To simplify system integration, both devices are fully-matched to 50 ohms with integrated DC blocking capacitors on both I/O ports.
Evaluation boards are available upon request.
These GaN PAs are included in Richardson RFPD's launch of the next generation of the TriQuint GaN Tech Hub, a micro-website featuring the latest news on GaN innovations and product releases from TriQuint. Recent additions to the Tech Hub include a white paperentitled ‘GaN Thermal Analysis for High-Performance Systems’ and a webinarthat discusses improved overall system performance using TriQuint’s new GaN products.
The devices are in stock and available for immediate delivery. Richardson RFPD's design advisors provide extensive technical expertise and design-in assistance for TriQuint products, including these two GaN on SiC power amplifiers for Ka-band applications. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the TriQuint GaN Tech Hub Featured Productswebpage. They are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from TriQuint, please visit the TriQuint storefrontwebpage.