advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
RFIC Channel

Cree RF GaN-on-SiC Foundry Process & Product Capabilities

Featured Video

April 4, 2014
/ Print / Reprints /
| Share More
/ Text Size+

Cree, Inc. is a market-leading supplier of GaN HEMT power transistor devices for wireless communications for applications ranging from DC to millimeter wave. As the leader in GaN-on-SiC technology, Cree provides design engineers with a proven foundry process for producing highly-reliable GaN HEMT MMIC devices with a high rate of first-pass success and improved yields. Cree provides design assistance, advanced layout tools, robust design rule checking (DRC), proven model support, and testing services to enable customers to achieve first-pass design success for their high-power, high-efficiency MMIC devices.

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement