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RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a
According to industry analyst firm Strategy Analytics, the GaN microelectronics market is expected to more than triple to
"AFRL has a distinguished history of developing high performance technologies with an understanding of underlying physics that drive reliability," added Cook. "RFMD plans to leverage AFRL's experience to offer reliable, 0.14 micron gate GaN power technology for mass production in our US-based, open foundry."
GaN technology supports broad frequency bandwidths and high breakdown voltages in a small area. RFMD's 6-inch GaN wafer offers 2.5-times more useable area over competing 4-inch GaN wafer platforms currently available, resulting in 2.5 times more RF power devices per wafer. Millimeter wave GaN enables the best trade-off between key performance parameters such as power gain, bandwidth and efficiency for applications in the range of DC to over 100GHz.
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