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Industry News

Richardson RFPD introduces 650 V NPT IGBTs from Microsemi

December 30, 2013
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Richardson RFPD Inc. announces availability and full design support capabilities for three new 650 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corp. (Microsemi). The new devices are the latest addition to Microsemi's family of 45 A to 95 A IGBTs.

These ultra-fast 650V NPT IGBTs represent the newest generation of Microsmi IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. They feature low saturation voltage, low tail current, short-circuit withstand ratings, high frequency switching, and ultra-low leakage current. They also allow developers to reduce total system cost by using them to replace more costly 600V to 650V MOSFETs in lower speed industrial applications up to 150 kHz.

The entire family of 650V and 1200V NPT IGBTs leverages Microsemi's leading-edge Power MOS 8™ technology and creates new benchmarks for IGBT efficiency.

Key features of the new NPT IGBTs include:

Part

Package

Ic2 Amps

Vces Volts

APT95GR65B2

TO-247

95

650

APT70GR65B

TO-247

70

650

APT45GR65B

TO-247

45

650

The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the Microsemi 650V NPT IGBTs webpage. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from Microsemi, please visit the Microsemi storefront webpage. 

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