Richardson RFPD Inc. announces availability and full design support capabilities for three new 650 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corp. (Microsemi). The new devices are the latest addition to Microsemi's family of 45 A to 95 A IGBTs.
These ultra-fast 650V NPT IGBTs represent the newest generation of Microsmi IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. They feature low saturation voltage, low tail current, short-circuit withstand ratings, high frequency switching, and ultra-low leakage current. They also allow developers to reduce total system cost by using them to replace more costly 600V to 650V MOSFETs in lower speed industrial applications up to 150 kHz.
The entire family of 650V and 1200V NPT IGBTs leverages Microsemi's leading-edge Power MOS 8™ technology and creates new benchmarks for IGBT efficiency.
Key features of the new NPT IGBTs include:
|
Part |
Package |
Ic2 Amps |
Vces Volts |
|
TO-247 |
95 |
650 |
|
|
TO-247 |
70 |
650 |
|
|
TO-247 |
45 |
650 |
The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the Microsemi 650V NPT IGBTs webpage. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from Microsemi, please visit the Microsemi storefront webpage.