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Industry News / RFIC Channel

TriQuint's new GaN and GaAs solutions improve efficiency, reduce part counts

December 10, 2013
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TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, is releasing new phase shifters, high-power limiters and gallium nitride (GaN) MMIC amplifiers that can improve system performance, increase efficiency and reduce part counts in wide-ranging defense and commercial applications.

TriQuint’s new GaN and gallium arsenide (GaAs) product solutions were released in conjunction with the Defense Manufacturers Conference (DMC) in Orlando, Florida. TriQuint’s three new high-power limiters handle up to 100W and protect sensitive circuits from electrical overload. Their low flat leakage shields low noise amplifiers (LNAs) while low insertion loss maximizes efficiency with reduced noise. The devices are ideal for receive chain (Rx) protection in commercial and defense radars.

TriQuint’s two new phase shifters cover 6 to 18 GHz, including X- and Ku-bands. They deliver wider frequency coverage than competing solutions for reduced part counts. Their 6-bit digital logic assures smooth, continuously variable time delay functionality. They are packaged for easy assembly in radar, electronic warfare (EW) and satellite communications applications.

New GaN amplifiers from TriQuint cover a wide range of applications with greater output power at superior efficiency, which enables smaller systems and reduced part counts.  TriQuint’s new die-level amplifier delivers superior broadband power and efficiency; its two new packaged 50W amplifiers support key radar (9 to 10 GHz) and satellite communications (7.9 to 8.4 GHz) frequencies.

TriQuint’s Spatium™ high power amplifiers deliver a highly reliable, efficient alternative to traveling wave tube wave amplifiers (TWTAs) for commercial and defense communications, radar and EW. Spatium dramatically improves broadband RF power and efficiency through patented coaxial spatial combining techniques using gallium arsenide (GaAs) or gallium nitride (GaN) MMIC amplifiers. Spatium supports the need for RF power at high efficiency from hundreds to thousands of watts.

High Power Limiters

Part Number

Frequency

(GHz)

Pin Handling

Insertion Loss (dB)

Leakage (dBm)

Return Loss (dB)

ECCN

TGL2205

1-6

50W

<0.5

<16

12

EAR99

TGL2206

2-4.5

70W

<0.5

<15

15

EAR99

TGL2207

2-5

70W

<0.5

<16

15

EAR99

 

Phase Shifters

Part Number

Frequency

(GHz)

Bits

RMS-AE (dB)

RMS-PE (deg)

IL (dB)

Input P1dB

IIP3 (dBm)

Vc

ECCN

TGP2105-SM

6-18

6

0.45

4

<10

>25

>41

0 / +5

EAR99

TGP2107-SM

6-18

6

0.55

5

<12

>25

>41

-5 / 0

EAR99

 

GaN Amplifiers

Part Number

Frequency

(GHz)

Psat

(W)

P1dB (dBm)

LS Gain

(dB)

SS Gain

(dB)

PAE

(%)

Bias

(V / mA)

ECCN

TGA2578

2-6

30

--

22

27

40

28 / 400

ITAR

TGA2586-FL

7.9-8.4

50

43

25

14

36

24 / 2.24A

3A001.b.3.b

TGA2312-FL

9-10

50

--

--

13

38

24 / 2.4A

3A001.b.3.b

 

Spatium Solutions

Part Number

Frequency (GHz)

Psat

(W)

Small Signal Gain (dB)

Power Gain (dB)

PAE

(%)

Vd

(V)

Prime Power

(VAC)

ECCN

  RM022020

2-20

15

45

44

8

90-264

3A001.b.4.b

  CHPA0618-100

6-18

100

55

50

12

90-264

3A001.b.4.b

  KA150W-2730

27-30

150

22

15

28

20

3A001.b.4.b

  KU250W-1416

14.4-16

250

25

22

20

30

3A001.b.4.b

  KU400W-1316

13.75-16

400

25

22

20

30

3A001.b.4.b

Contact a local TriQuint sales representative or visit TriQuint on the web for more information about new defense and commercial high-performance solutions. TriQuint GaN innovation includes MMIC amplifiers, switches, die-level and packaged transistors; register for product updates and TriQuint’s newsletter. 

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