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Industry News / RFIC Channel

Richardson RFPD introduces 48 V GaN-on-Si RF power transistors from Nitronex

RFIC

November 20, 2013
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Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.

The new high-electron-mobility transistors (HEMTs) operate up to 4000 MHz, are designed for continuous wave (CW), pulsed, and linear operation, and they include plastic and ceramic package options. The new devices offer high gain, power and efficiency, as well as decreased thermal resistance. They are versatile for a range of applications, including aerospace and defense, broadband radio, land mobile radio (LMR), avionics and radar, wireless infrastructure, ISM, and broadcast transmission.

Key features of the new 48V GaN-on-Si HEMTs include:

Part Number

Frequency

(MHz)

Gain

(dB)

Psat

(dBm)

PAE
(%)

Drain Efficiency
(%)

Rth, J-C
(ºC/W)

Package

NPT2018

DC-4000

16

41

60

55

7

Plastic - 3x6 mm DFN

NPT2019

DC-3000

16

44

60

55

3.6

Plastic - 3x6 mm DFN

NPT2020

DC-3500

17

48

60

52

2.3

Ceramic - AC360B

NPT2021

DC-2200

17

47.5

60

55

1.9

Plastic - TO272

NPT2010

DC-2200

17

50.5

64

61

1.75

Ceramic - AC360B

NPT2022

DC-2200

19

50.5

64

60

1.7

Plastic - TO272

Richardson RFPD's design advisors provide extensive technical expertise and design-in assistance for Nitronex products, including these new GaN-on-Si HEMTs. To find more information, or to order these devices today on the Richardson RFPD website, please visit the Nitronex 48V GaN-on-Silicon Transistors webpage.The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Nitronex, please visit the Nitronex storefront webpage. 

Source: Richardson RFPD Inc.

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