Horizon House Publications and Microwave Journal China announced the participation of several leading semiconductor foundries, Integrated Device Manufacturers and IC distributors at the Electronic Design Innovation Conference (EDI CON 2014) to be held April 8 – 10, 2014 at the Beijing International Convention Center in Beijing, China. These participating companies will offer their expertise in designing and utilizing advanced GaN transistors in RF amplifier and switch applications requiring high-power, wideband performance. GaN device manufacturers including Cree, MACOM, NXP and Freescale will be presenting their GaN solutions in workshops and technical presentations to an audience of RF/microwave design engineers and system integrators. Richardson RFPD, a leading distributer of specialized components and Gold Sponsor of this year’s event will be the host of the second annual GaN Panel featuring device manufacturers to be named later.
EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets. The technical program and exhibition includes the leading international RFIC, component and material manufacturers, semiconductor foundries, EDA software and test equipment/solution providers. This year’s conference features the most recent trends in high-frequency electronics and wireless communication technology, addressing all aspects of design, simulation and test verification through an understanding of system requirements for wireless communication networks such as small cell infrastructure, SATCOM and microwave backhaul.
As workshop sponsors, MACOM (Silver Sponsor) and Freescale Semiconductor (Bronze Sponsor) will each present a 40 minute live seminar on various technology and design considerations impacting the use of GaN in un-matched transistors, internally matched power transistors, and fully matched power pallets and modules. Engineers attending the event will learn about high performance GaN HEMT processes, characterization, design architectures, thermal management and assembly techniques to best leverage GaN’s robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency and ruggedness. NXP will present a 20 minute talk in the commercial track of the technical program discussing the company’s GaN RF power devices with best in class linearity, power, ruggedness and efficiency for Base Station, Industrial Scientific & Medical and Aerospace & Defense applications.
Cree Inc. will co-sponsor two 40 minute workshops in partnership with design software vendor AWR (EDI CON Corporate Sponsor) to address the educational needs of RF/microwave designers in China interested in the design of Class F, inverse Class F, and continuous Class F power amplifiers using Cree GaN HEMTs and AWR’s Microwave Office® circuit design software. Compound Semiconductor foundries, OMMIC/ERA (France/China) and WIN Semiconductor (Taiwan) will also be presenting workshops and participating in a panel discussion on the state of RF/microwave semiconductor materials including GaN, GaAs, SiGE, InP and CMOS technologies.
About Horizon House
Horizon House is an experienced and well-established organizer of targeted events, including European Microwave Week (EuMW) on behalf of the European Microwave Association (EuMA), and several major microwave related conferences/exhibitions such as the RF/Microwave, M2M and Microwave Backhaul Zones at CTIA.
Microwave Journal China, a Horizon House Publication and sister magazine of Microwave Journal, will actively promote and publicize EDI CON 2013 to local engineers, technology companies and academia, while also providing input from, and a link to, the wider high speed, high frequency, RF and microwave community.
For information on the conference program, ongoing updates and major announcements and to register for EDI CON 2013 visit: