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AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.
Similarly, an updated NXP Semiconductor's laterally-diffused metal oxide semiconductor (LDMOS) Large Signal Device model library is also now ready for use within AWR’s Microwave Office software. It includes RF power transistors designed specifically for the 2.45 GHz ISM frequency band, enabling RF energy to be used as a clean, highly efficient and controllable heat source. Optimally matched to the ISM band, the NXP BLF2425M and BLF25M series of RF power transistors achieve best-in-class efficiencies in excess of 52 percent and offer a full range of power levels between 12 and 350 W for use inhome appliances for cooking, heating and drying; precision medical devices and automotive ignition .
Demonstration of the reference design and updated library can be seen during EuMW at the AWR booth #126 and the NXP booth #120.
The AWR-enabled NXP ultra-wideband reference design and the new LDMOS device models are available today. NXP’s LDMOS process technology simulation library is free of charge and can be downloaded at: http://www.nxp.com/models/.
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