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Industry News / RFIC Channel

RFMD begins high-volume production of ET PA to support recent LTE device design wins

October 8, 2013
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RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that it has commenced high-volume production of multiple new power amplifiers (PAs) and power management integrated circuits (ICs) that incorporate RFMD's envelope tracking (ET) technology. RFMD's unique ET technology significantly enhances power efficiency in new LTE platforms, resulting in enhanced battery life across all modes and bands, increased network coverage, and higher data rate throughput.

RFMD is a pioneer in the development of RF power management and envelope tracking technology. Unlike traditional PAs that operate with a constant supply voltage, the supply voltage applied to RFMD's ET-enabled PAs is continuously adjusted so that the amplifier operates at maximum power efficiency. The result is much lower battery power consumption, particularly in LTE platforms.

RFMD's expanding ET product portfolio is tailored for today's leading LTE chipsets and provides full ET compatible coverage of all FD-LTE and TD-LTE bands (1-14, 17-21, 25-28, 38, 40, 41, and 44). RFMD's expanding portfolio of envelope tracking-enabled solutions includes its RF7389 and RF8085 multimode, multi-band PAs, the RF80xx(i) family of 10 single-band satellite PAs, and its RF8081 ET power management IC.

"This volume ramp-up of a broad family of envelope tracking-enabled products puts RFMD at the forefront of the ET revolution and is a testament to the market success of our technology, which is very well suited for the power demands of new LTE platforms now being rolled out across the globe," said Eric Creviston, president of RFMD's Cellular Products Group. "RFMD is very well positioned with power management technologies such as envelope tracking and average power tracking to expand our RF content in the newest generation of smartphones, tablets, ultrabooks and machine-to-machine (M2M) applications." 

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