RFMD introduces world's first 6-Inch GaN-on-SiC wafers for RF power transistors
"We are pleased to introduce the industry's first 6-inch GaN-on-SiC RF technology on RFMD's existing high- volume 6-inch GaAs manufacturing line," said
According to industry analyst firm Strategy Analytics, the GaN microelectronics market is expected to more than triple to
"By leveraging our technology leadership and high-volume expertise in 6-inch GaAs production, RFMD will now be able to add 6-inch GaN capabilities to deliver new
GaN technology supports broad frequency bandwidths and high breakdown voltages in a small area. A 6-inch GaN wafer offers 2.5-times more useable area over competing 4-inch GaN wafer platforms currently available, resulting in 2.5 times more RF power devices per wafer. Larger area-per-wafer and subsequent lower cost per unit area (in dollars per square millimeter) is key to enabling affordable, high performance power monolithic microwave ICs (MMICs) for military and commercial applications. RFMD expects to complete qualification of its 6-inch GaN platforms in 2014.