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Military Microwaves Supplement
Recent Advances in Radar Technology
Using Calibration to Optimize Performance in Crucial Measurements
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3 dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.
Both devices operate from DC to 3.5 GHz and offer > 50% drain efficiency from a 36 V supply. Linear gain is as high as 15 dB. Both packages offer low thermal resistance and the RF inputs of the T1G4012036-FL and T1G4012036-FS are pre-matched for S-Band operation.
Applications for the T1G4012036 include wideband or narrowband amplifiers, civilian and military radar, communication systems and jammers.
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