GaN Transistors: T1G4012036-FL and FS
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3 dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.
Both devices operate from DC to 3.5 GHz and offer > 50% drain efficiency from a 36 V supply. Linear gain is as high as 15 dB. Both packages offer low thermal resistance and the RF inputs of the T1G4012036-FL and T1G4012036-FS are pre-matched for S-Band operation.
Applications for the T1G4012036 include wideband or narrowband amplifiers, civilian and military radar, communication systems and jammers.