Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Featuring the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems.
Based on Cree’s 50 V 0.4µ GaN on SiC foundry process, Cree’s new GaN HEMTs for L-Band radar systems provide engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility.
The 250 W CGHV14250 features 330W typical output power, 18 dB power gain, and 77% typical drain efficiency. The 500W CGHV14500 features 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Both the 250 W and 500 W GaN HEMTs feature 0.3 dB pulsed amplitude droop.
To view a video demonstration of the CGHV14500, please visit: http://www.youtube.com/watch?v=1GFAxg7IfFM. To access datasheets for the new 250 W and 500 W GaN HEMTs, please visit: http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV14250.pdf and http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV14500.pdf. Large-scale models are available at Agilent ADS and AWR Microwave, and stock will be available at Digikey by September.
For additional information, please visit www.cree.com/rf or contact Sarah Miller, Marketing and Export, Cree RF Components, at email@example.com or 919-407-5302. To schedule a source interview with a representative from Cree RF, please contact me using the information listed below.