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High-Efficiency FET: TGF2160

June 28, 2013
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tgf2160

RFMW Ltd. announces design and sales support fora discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5 dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.

Designed using TriQuint’s proven 0.25 um pHEMT process which optimizes power and efficiency at high drain bias operating conditions, the TGF2160 offers 63% PAE at 8 V and 517 mA Idss. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required.

A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. The TriQuint TGF2160 is available in a 0.41 x 0.54 x 0.10 mm chip suitable for eutectic die attach.

Part

12 GHz

DC

Gate

Die Size

Vds = 8V, Ids = 50% Idss

Vds = 2V

P1dB

G1dB

PAE

NF

Idss

Gm

Vp

BVgd

BVgs

Rth

TGF2018

22

14

55

1

58

70

-1.0

-15

-15

88

0.25x180

410 x 340

TGF2025

24

14

58

0.9

81

97

-1.0

-15

-15

62.5

0.25x250

410 x 340

TGF2040

26

13

55

1.1

129

155

-1.0

-15

-15

60

0.25x400

410 x 340

TGF2060

28

12

55

1.4

194

232

-1.0

-15

-15

54

0.25x600

410 x 340

TGF2080

29.5

11.5

56

259

309

-1.0

-15

-15

33

0.25x800

410 x 540

TGF2120

31

11

57

388

464

-1.0

-15

-15

31

0.25x1200

410 x 540

TGF2160

32.5

10.4

63

517

619

-1.0

-15

-15

31

0.25x1600

410 x 540

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