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RFMD introduces 500 W GaN L-Band amplifier
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
RFMD's new amplifier is optimized for pulsed power applications requiring efficiency and compact size. It operates from 1.2 GHz to 1.4 GHz and provides 500 W of pulsed RF power from a 50 Volt supply. It also offers high gain of 16.5 dB and high efficiency of 55 percent. The RFHA1027 is housed in a small form factor package of 24mm by 17.4 mm, and is input and output matched to 50 ohms, efficiently minimizing external components. In addition, the package leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.
The RFHA1027 targets new and existing radar architectures requiring ruggedness and reliability. The introduction of RFHA1027 follows the previous release of RFHA1020 (280W L-Band) and RF3928 (280W S-Band).
"RFMD is pleased to introduce this new device with industry-leading power performance in support of diverse-end markets," said
RFMD is showcasing a broad portfolio of industry-leading RF components at the International Microwave Symposium 2013 in