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Industry News

RFMW introduces 800-Micron discrete FET from TriQuint

June 3, 2013
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RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2080 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint TGF2080 provides 29.5dBm P1dB with 11.5dB associated gain and power added efficiency (PAE) of 56%. A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required.  The TGF2080 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.

Part

12 GHz

DC

Gate

Die Size

Vds = 8V, Ids = 50% Idss

Vds = 2V

P1dB

G1dB

PAE

NF

Idss

Gm

Vp

BVgd

BVgs

Rth

TGF2018

22

14

55

1

58

70

-1.0

-15

-15

88

0.25x180

410x340

TGF2025

24

14

58

0.9

81

97

-1.0

-15

-15

62.5

0.25x250

410x340

TGF2040

26

13

55

1.1

129

155

-1.0

-15

-15

60

0.25x400

410x340

TGF2060

28

12

55

1.4

194

232

-1.0

-15

-15

54

0.25x600

410x340

TGF2080

30

11.5

60

259

310

-1.0

-15

-15

45

0.25x800

410x540

TGF2120 *

32

11

60

388

464

-1.0

-15

-15

38

0.25x1200

410x540

TGF2160 *

33

10.5

63

517

619

-1.0

-15

-15

32

0.25x1600

410x540

 *Coming Soon 

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