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Industry News / RFIC Channel / MTT-S IMS

TriQuint accelerates GaN offerings, releases significant new products and foundry services

May 23, 2013
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TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.

James L. Klein, Vice President and General Manager for Infrastructure and Defense Products, remarked that GaN’s performance advantages are now more accessible to RF manufacturers thanks to TriQuint’s expansion of process and product solutions.

“This announcement shows the accelerated pace of TriQuint innovation. Customers have access to more world-class products in addition to three GaN processes supported by packaging, assembly and test services. TriQuint is comprehensively addressing the most demanding RF requirements with the flexibility to engage customers of all sizes.”

Noted researcher Strategy Analytics foresees significant GaN growth. “While defense remains the largest GaN revenue source, infrastructure is growing fast. Sat-Com, power and CATV are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a CAAGR of over 34% to approximately $186M by 2015,” said Eric Higham, Director of Semiconductor Practice.

TriQuint GaN innovation at IMS / MTT-S

TriQuint’s original quarter-micron process is now complemented by a high voltage variant, TQGaN25HV. The new process extends the drain operating voltage of 0.25-micron gallium nitride to 48V while delivering higher breakdown voltage, greater power density and high gain for DC-10 GHz applications. These advantages enable more rugged devices that can withstand VSWR mismatches that might destroy other circuits while delivering more RF output power. A new TriQuint product designed with this process is T1G4012036-FS/FL, a 120W packaged transistor for radar and infrastructure. It is nearly two-thirds smaller than similar LDMOS devices. Additional products built with TQGaN25HV are now available.

TriQuint has taken GaN technology to new limits with its third process, TQGaN15. It pushes the frequency range of gallium nitride to 40 GHz while delivering high power density and low-noise performance. This 0.15-micron GaN on SiC process was used to create TriQuint’s new TGA2594 (5W) and TGA2595 (10W) Ka-band VSAT ground terminal amplifiers. They have up to 35% PAE and are three times smaller than comparable gallium arsenide (GaAs) solutions. Additional products built using TQGaN15 are now available.

TriQuint’s product portfolio of new GaN solutions also includes the ground-breaking TAT9988 direct-to-board MMIC amplifier for CATV and fiber to the home (FTTH) optic networks. It was created with the second-generation of TriQuint’s original TQGaN25 process. The TAT9988 leads the industry in gain, composite distortion performance and surface mount convenience.

TriQuint’s expanded range of GaN innovation is complimented by its integrated assembly services that include die-level device packaging, X-ray and testing. TriQuint is also a DoD-accredited ‘Trusted Source’ for GaN and GaAs, which includes post-processing test and packaging services.

Product Solutions Technical Details: Contact TriQuint for additional information.

Amplifiers

Description

Frequency Range (GHz)

Saturated Power (W)

P1dB (Psat) / OIP3 (dBm)

Gain (dB)

NF / PAE (dB) / (%)

Voltage / Current (V / mA)

Package Style

Part
Number

  GaN S-Band PA

3 - 3.5

80

(49)  /  --

22

– / 55

28 / 125

Die

TGA2814

  GaN S-Band PA

3 - 3.5

100

(50)  / --

22

– / 55

28 / 150

Die

TGA2813

  GaN C/X-Band HPA

6 - 12

30

(45)  /  –

30

– / 30

25 /  1100

Die

TGA2590

  GaN X-Band PA

9 - 10

20

(43)  /  --

25

– / 50

25 / 150

Die

TGA2624

  GaN X-Band PA

9 - 10

30

(45)  /  --

25

– / 45

25 /  250

Die

TGA2622

  GaN X-Band PA

9 - 10

60

(48)  /  --

10

– / 35

24 /  2400

Die

TGA2312-FL

  GaN X-Band PA

10 - 11

30

(45)  /  --

25

– / 45

25 /  250

Die

TGA2623

  GaN X-Band PA

10 - 11

16

(42)  /  --

25

–  / 45

25 / 150

Die

TGA2625

  GaN Ka-Band PA

27 - 31

5

(37)  /  --

19

– / 30

20 / 280

Die

TGA2594

  GaN Ka-Band PA

27 - 31

10

(40)  /  --

17

– / 25

20 / 560

Die

TGA2595

 

Driver Amplifier

Description

Frequency Range (GHz)

Saturated Power (W)

P1dB (Psat) / OIP3 (dBm)

Gain (dB)

NF / PAE (dB) / (%)

Voltage / Current (V / mA)

Package Style

Part
Number

  GaN 2W Driver PA

2 - 6

2

33 / --

23

-- / 30

25 / 170    

Die

TGA2597

Low Noise Amplifiers

Description

Frequency
Range (GHz)

P1dB / IIP3 (dBm)

Gain (dB)

NF
(dB)

Voltage / Current (V / mA)

Package Style

Part

Number

  GaN LNA

2 - 6

25

25

1

10 / 100

Die

TGA2611

  GaN LNA

6 - 12

25

25

1.5

10 / 100

Die

TGA2612

Discrete RF Power Transistors

Description

Frequency Range (GHz)

P1dB (Psat)
(dBm)

Gain (dB)

DE
(%)

Voltage / Current (V / mA)

Package Style

Part

Number

  GaN 120W: EAR99

DC - 3.5

120

13

52

36 / 360

Ceramic

T1G4012036-FS / -FL

  GaN 10W: EAR99

DC - 6

40

16

53

32 / 50

5x5 QFN

T1G6001032-SM

 TriQuint will detail advances of its GaN product and process solutions in Booth 530 on June 4 and 5 at 11:00AM and 1:00PM each day. Hear about TriQuint’s 15 new GaN products, new foundry services and its ‘Trusted Source’ DoD-accredited programs. Contact TriQuint to arrange a meeting. Register to receive product updates and TriQuint’s newsletter.  

Recent Articles by TriQuint Semiconductor Inc.

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