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400-Micron GaAs pHEMT FET: TGF2040

May 10, 2013
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tgf2040

RFMW, Ltd. announces design and sales support for TriQuint SemiconductorTGF2040, a discrete 400-Micron GaAs pHEMT FET. Designed using TriQuint’s proven 0.25 um pHEMT process, power and efficiency at high drain bias operating conditions are optimized. The TriQuint TGF2040 supports circuit designs to 20 GHz with up to 26 dBm P1dB, gain up to 13 dB and 55% power-added efficiency (PAE).

The TGF2040 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Power supply requirements are reduced which is particularly useful in airborne applications such as UAVs. Along with hi-rel defense and aerospace, additional applications include test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required.

The TriQuint TGF2040 is available in DIE with a silicon nitride, protective overcoat layer providing a level of environmental robustness and scratch protection. The TGF2040 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.

Part

12 GHz

DC

Gate

Die Size

Vds = 8V, Ids = 50% Idss

Vds = 2V

P1dB

G1dB

PAE

NF

Idss

Gm

Vp

BVgd

BVgs

Rth

   

TGF2018

22

14

55

1

58

70

-1.0

-15

-15

88

0.25x180

410x340

TGF2025

24

14

58

0.9

81

97

-1.0

-15

-15

62.5

0.25x250

410x340

TGF2040

26

13

55

1.1

129

155

-1.0

-15

-15

60

0.25x400

410x340

TGF2060

28

12

55

1.4

194

232

-1.0

-15

-15

54

0.25x600

410x340

TGF2080 *

30

11.5

60

259

310

-1.0

-15

-15

45

0.25x800

410x540

TGF2120 *

32

11

60

388

464

-1.0

-15

-15

38

0.25x1200

410x540

TGF2160 *

33

10.5

63

517

619

-1.0

-15

-15

32

0.25x1600

410x540

*Coming Soon

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