API Technologies Corp., a provider of RF/microwave, microelectronics, and security solutions for critical and high-reliability applications, has expanded its power amplifier line of products to include the latest in GaN technology driven designs. This expanded line is specially intended for use in electronic warfare, RCIED countermeasures, and national security jammer applications where the use of rugged and highly reliable power amplifier designs is mission critical. The company's line of power amplifier products will be on display at the annual IMS 2013 Exhibition (Booth #744), June 4-6 in Seattle.
Working closely with leading edge semiconductor suppliers, API Technologies exploits the benefits of innovative semiconductor technologies, paving the way toward increased power density and complexity while reducing the overall size of the amplifier. This translates to power amplifier solutions that are reliable, smaller, lighter, and more efficient.
"Our strategy, to create strategic partnerships with leading defense companies to provide both standard and custom solutions, has earned us a reputation as a leader in the broadband power amplification market," said Richard Graham, director, sales and marketing, RF/Microwave & Microelectronics, API Technologies. "API's successful heritage in amplifier design includes both broadband, high linearity amplifiers, as well as high frequency, narrowband, higher power amplifiers to 100 watts with strict attention to size and value."
API has earned its reputation and heritage in the broadband power amplifier market by delivering leading edge technical designs and high quality products as a direct result of working closely with key defense companies to meet their strict technical specifications and quality requirements. In addition to these leading edge electrical designs, API engineers optimize package configurations to address numerous thermal conditions to meet end customer's system level integration challenges. API provides compact, lightweight, excellent thermal characteristic power amplifiers to customers in the shortest possible lead-time (6 - 8 weeks). Engineering high-power GaN power amplifiers to predict junction-to-case temperatures and thermal profiles during the design stage, helps eliminate the need for cumbersome heat-sinks thus reducing cost and providing for more accurate results.
API currently offers Class A, AB, and C power amplifier designs up to 500 watts from 100 kHz to 6000 MHz. Recent developments also include higher power 1 kilowatt pulsed applications through X-band. For more information about API Technologies' RF/Microwave & Microelectronics product line, including high performance power amplifier solutions, please contact +1 (888) 553-7531 or email firstname.lastname@example.org.