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RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2025 provides 24dBm typical output power at P1dB with gain of 14dB and 58% power-added efficiency. This performance makes the TGF2025 appropriate for high efficiency applications in hi-rel circuits and broadband commercial or military subsystems. Available as DIE, the TGF2025 has a protective overcoat layer with silicon nitride providing environmental robustness and scratch protection for hybrid designs.
Additional information on the TGF2025 may be found on the RFMW web site at http://www.rfmw.com/ProductDetail/TGF2025-TriQuint-Semiconductor-Inc/457677/pid=938.
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