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Richardson RFPD introduces 35 W, 32 V GaN on SiC RF power transistors from TriQuint
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor Inc. (TriQuint).
The T1G4003532-FL and T1G4003532-FS are 37 W (P3dB) discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs by decreasing the number of amplifier line-ups needed and lowering thermal management costs.
The new transistors operate at 32 V for improved overall circuit efficiency, offer high compressed gain and greater than 33W of compressed output power, and may be used as a driver or final stage. The T1G4003532-FL is offered in a bolt down flanged package; the T1G4003532-FS is in a solder down earless package. Both are ideally-suited for commercial and military radar, professional and military radio communications systems, test instrumentation, jammers, and wideband or narrowband amplifiers.
Key features of the devices include:
|Power (P3dB)||Gain (P3dB)||DE (P3dB)|
|T1G4003532-FL / -FS||DC - 3.5 GHz||45 W||37 W||13.9 dB||13.9 dB||58%||57%||32 V||150mA|
The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the T1G4003532-FL and T1G4003532-FS webpages. They are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from TriQuint, please visit the TriQuint storefront webpage.