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TriQuint to showcase 12 new products at EuMW

October 31, 2012
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TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is rolling out new processes to more quickly expand its catalog of broad-market products for commercial and defense customers. As a result, TriQuint will spotlight 12 new products at European Microwave Week in Amsterdam, October 29-31.

TriQuint’s new product solutions include a family of RF GPS diplexers that reduces PCB space nearly three times compared to ceramic filter products. TriQuint will also showcase new packaged transistors and amplifiers including four based on gallium nitride (GaN) and four based on gallium arsenide (GaAs) technology. The products support a wide variety of commercial and defense applications such as emergency responder radios, electronic warfare, radar solutions and test equipment.

 “TriQuint’s new integration approach and focus on broad-market products is allowing us to be more responsive to customer requests,” said Infrastructure and Defense Products Vice President and General Manager, James L. Klein.  “TriQuint’s focus to expand our product lines and deliver more products to customers more quickly has resulted in a new approach to filter technology. This new design and manufacturing flexibility will enable our global customers to bring their products to market faster than ever.”

An example:  new integration approach helps customers

The concept behind today’s announcement of TriQuint’s new diplexer family grew out of customer needs for performance and faster delivery, along with the option to change filters throughout production lifetimes. TriQuint’s new diplexer modules allow designers to incorporate any two filters from its extensive surface acoustic wave (SAW) CSP5 portfolio. This new flexibility gives infrastructure and defense customers a customized solution using commercial off-the-shelf (COTS) products while avoiding the cost and time of a custom design. The solution also protects against performance compromises when trying to use a single device across multiple applications.

In addition to quicker product delivery, the new approach allows customers to reduce the space needed for filter designs.  The new plug-and-play, 5x5x2mm integrated products are orders of magnitude smaller than lumped element diplexers and nearly three times smaller than similar high performance RF ceramic filter modules.

New radar and sensing technologies

Besides showcasing its new products at EuMW, TriQuint will present new radar and sensing technology solutions in the European-focused ‘Defence, Security and Space Forum’ on October 31 in the main auditorium of the RAI Center. The presentation is a special program of European Microwave Week and will focus on new GaN products and integrated assemblies for the changing needs of global security and defense systems.  Admission is free.

Technical Specifications for TriQuint EuMW Product Solutions: Sampling Now

890084

SAW high-rejection diplexer module for GPS: L1 band (857140): 1575.42 MHz center frequency, 35dB rejection (824-960 MHz); 34dB (1710-2170 MHz). L2 band (857142): 1227.6 MHz center frequency, 47dB rejection (464-600 MHz) and 36dB (1360-1820 MHz); requires no matching; 5x5x2.1mm SMT pkg.

890085

SAW low-loss diplexer module for GPS: L1 band (857139): 1575.42 MHz center frequency, 20dB rejection (824-960 MHz); 21dB (1710-2170 MHz). L2 band (857141): 1227.6 MHz center frequency, 29dB rejection (464-600 MHz) and 18dB (1360-1820 MHz); requires no matching; 5x5x2.1mm SMT pkg.

890086

 SAW high-rejection diplexer module for GPS: L1 band (857140): 1575.42 MHz center frequency; 34dB rejection (824-960 MHz); 33dB (171002170 MHz). L5 band (857144): 1176.45 MHz center frequency; 46dB rejection (414-550 MHz); 36dB (1310-1770 MHz); requires no matching; 5x5x2.1mm SMT pkg.

890087

SAW low-loss diplexer module for GPS: L1 band (857139): 1575.42 MHz center frequency; 19dB rejection (824-960 MHz); 18dB (1710-2170 MHz). L5 band (857143): 1176.45 MHz center frequency; 30dB rejection (414-550 MHz); 19dB (1310-1770 MHz); requires no matching; 5x5x2.1mm SMT pkg.

T1G6003028-FS

DC-6 GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flangeless package.

T1G6003028-FL

DC-6 GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flanged package.

T1G4003532-FS

DC-3.5 GHz GaN RF power transistor: 37W CW; more than 16dB gain at 3.5 GHz; 10dB gain at 6 GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99 flangeless package.

T1G4003532-FL

 DC-3.5 GHz GaN RF power transistor: 37W CW, more than 16dB gain at 3.5 GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99; flange mount package.

TGA2502-GSG

13-16 GHz GaAs pHEMT RF power amplifier: 2.8W; 20dB large-signal gain; 25dB small-signal gain; 25% efficiency; 7V at 1.3A; 14-lead flange mount package.

TGA2704-SM

9-11 GHz GaAs pHEMT RF power amplifier: 7W; 19dB large-signal gain; 22dB small-signal gain; 40% power-added efficiency; 9V at 1.05A; 7x7x1.27mm leadless SMT package.

TGA2710-SM

9.5-12 GHz GaAs pHEMT RF power amplifier: 7W; 19dB large-signal gain; 20dB small-signal gain; 36% power-added efficiency; 9V at 1.05A; 7x7x1.27mm leadless SMT package.

TGA2575-TS

32-38 GHz GaAs pHEMT RF power amplifier: 3W; 19dB small-signal gain; 22% power-added efficiency; 6V at 2.1A. TGA2575 die is mounted to an 8.92x5.31mm thermal spreader.

Contact product marketing for samples and evaluation boards. Visit TriQuint on the web, or contact Sales for a representative in your area.

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