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GaN - SiC High Electron Mobility Transistor: T1G6003028-FS

October 23, 2012
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MK1204xxT1G6003028Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 30 W (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor, Inc. (TriQuint).

The T1G6003028-FS is constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is ideally-suited for military and commercial radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications.

Key features of the T1G6003028-FS include:

  • Frequency: DC to 6 GHz
  • Output Power (P3dB): 30 W at 6 GHz
  • Linear Gain: >14 dB at 6 GHz
  • Operating Voltage: 28 V
  • Low thermal resistance package

The device is in stock and available for immediate delivery. To find more information, or to purchase this product today on the Richardson RFPD website, please visit the T1G6003028-FS webpage. It is also available by calling 1-800-737-6937 (within North America).

See more from us in our Buyers Guide directory listing.

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