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GaN on SiC SPDT Switches: TGS2351-SM, 2352, 2353

October 16, 2012
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MK120414 TriQuint 3 new GaN SwitchesSuperior power handling and isolation performance ideal for defense applications.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three single-pole, double-throw (SPDT) switches designed using the 0.25µm GaN on SiC production process from TriQuint Semiconductor, Inc. (TriQuint).

The packaged TGS2351-SM operates from DC to 6 GHz and typically provides up to 40 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of less than 1 dB and high isolation of -40 dB typical. The TGS2352 operates from DC to 12 GHz and typically provides up to 20 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1 dB and high isolation of -35 dB typical. The TGS2353 operates from DC to 18 GHz and typically provides up to 10 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1.5 dB and high isolation of -30 dB typical.

The new SPDT switches are ideally-suited for high power switching applications, including electronic warfare, commercial and military radar, and high power communications systems.

Additional key features of the devices include:

 Part Number

Frequency Range (GHz)

Insertion Loss (dB)

Isolation (dB)

Max Input Power (dBm)

Switching Time (ns)

Package Type (mm)

TGS2351- SM

0-6

0.8

-40

46

50

4.0 x 4.0 x 1.43

 

TGS2352

 

0-12

 

1.0

 

-35

 

43

 

31

 

1.15 x 1.65 x 0.1

 

TGS2353

 

0-18

 

1.5

 

-30

 

40

 

31

 

1.15 x 1.65 x 0.1

The devices are in stock and available for immediate delivery.

To find more information call 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support.

See more from us in our Buyers Guide directory listing.

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