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Industry News

Aethercomm introduces a high power GaN SSPA

October 9, 2012
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Aethercomm Inc., has recently completed a high power SSPA using a Gallium Nitride (GaN) with a frequency range covering 2.9 to 3.1 GHz: Aethercomm part number SSPA 2.9-3.1-300. The devices in this amplifier design are not matched, therefore the frequency band is scalable from 2.7 to 2.9 GHz or 2.7 to 3.5 GHz with similar performance. This high power SSPA produces 300 to 400 watts peak output power. The amplifier design is ideal for radar platforms and is housed in a 5.0(w) by 8.0(l) by 1.94(h) inch module. The SSPA 2.9-3.1-300 amplifier is designed for either Pulsed or CW. Other key points of this design are:

  • Scalable operating bandwidth
  • GaN technology
  • High power added efficiency
  • 300 to 400 W peak output power
  • Power flatness across band is ± 0.25dB (Typical)
  • Input/output VSWR is 2.0:1 (Typical)
  • Typical on/off timing values are 5.0 uSec
  • Base plate temperature of -40 to +85C
  • +50 Vdc Operation 

Recent Articles by Aethercomm Inc., Carlsbad, CA

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