New devices leverage Microsemi's Power MOS 8™ technology; offer dramatic 20+ percent reduction in total switching and conduction losses.
Richardson RFPD, Inc. announces availability and full design support capabilities for a new family of 1200 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi).
This new generation of IGBTs leverages Microsemi's leading-edge Power MOS 8™ technology and offers a dramatic reduction of twenty percent, or more, in total switching and conduction losses as compared to competitive solutions.
The new IGBTs were specifically designed for solar inverter, uninterruptible and switch mode power supply applications. These high speed NPT IGBTs can also replace 1000V to 1200V MOSFETs in applications up to 100 KHz, at lower costs.
The new discrete products include the APT40GR120B and the APT40GR120B2D30. The devices are offered on a standalone basis, or they may be packaged in combination with one of Microsemi's FRED or silicon carbide Schottky diodes to simplify product development and manufacturing.
Key features of the new devices include:
- Significantly lower gate charge (Qg) than competition for faster switching;
- Hard switching operation greater than 80 KHz to enable more efficient power conversion;
- Easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications; and
- Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.
The APT40GR120B is offered in a TO-247 package. The APT40GR120B2D30 is a T-MAX® packaged device that includes a 30A anti-parallel, ultrafast recovery diode built with Microsemi's proprietary "DQ" generation of low switching loss, avalanche energy rated diode technology.
The devices are in stock and available for immediate delivery. The devices are available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at local sales support.
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