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RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.
RFMD expects to supply the majority of the 3G and 4G power amplifiers in Samsung’s highest volume smartphones this calendar year. RFMD already supports multiple feature phones, smartphones and tablets for Samsung with a broad range of products, including PowerSmart® power platforms, ultra-high efficiency power amplifiers, and other critical high-performance components. This most recent 4G LTE smartphone to be supported by RFMD features a dual core multi-mode 3G/LTE modem.
Eric Creviston, president of RFMD’s Cellular Products Group, said, “These shipments of RFMD’s ultra-high efficiency 3G/4G power amplifiers to Samsung underscore our strong design momentum in next-generation mobile devices and our early market share leadership in the rapidly growing LTE market. We currently forecast robust growth in LTE in calendar 2012, as LTE devices grow from approximately 20 million units in calendar 2011 to greater than 100 million units in calendar 2012.”
RFMD's ultra-high efficiency 3G and 4G LTE PAs enable increased battery life in smartphones while reducing the thermal impact of advanced data-based applications, including web surfing, video calling and internet radio. The product family covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 3, 4, 7, 11, 13, 17, 20, and 21 — addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.
RFMD supplies the industry’s broadest portfolio of 3G and 4G LTE power amplifier solutions, ranging from single-mode/single-band components to complete multimode/multi-band front end reference designs. RFMD’s 3G and 4G LTE product portfolio is aligned with the world’s leading baseband chipset providers.
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