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Richardson RFPD introduces GaN on SiC HEMT RF transistors from Microsemi

June 26, 2012
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Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).

The common source GaN on SiC transistors are internally-matched for optimal performance and specifically designed for S-band radar applications, making them easier to design-in than unmatched broadband devices. Peak output power levels range from 110-280W (Class AB), with high power gain and drain efficiency across the frequency band and under pulse conditions specified with a power supply of 60V. The devices utilize gold metallization and eutectic attach to provide the highest reliability and superior ruggedness.

Key features of the new family of devices include:

Part Number

Frequency (GHz)

Pout (W)

Gain (dB)

PW (μs)

DF %

2729GN-150

2.7-2.9

150

13

100

10

2729GN-270

2.7-2.9

280

14

100

10

2731GN-110

2.7-3.1

110

12

200

10

2731GN-200

2.7-3.1

200

12

200

10

3135GN-170

3.1-3.5

170

11

300

10

The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the Microsemi GaN on SiC HEMT RF Transistors webpage. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from Microsemi, please visit the Microsemi storefront webpage.

See more from us in our Buyers Guide directory listing.

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