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Aerospace and Defense Channel / Cellular 4G/LTE Channel / Industry News

SEDU to demo GaN HEMTs for S- and X-Band radar Applications at IMS 2012

June 15, 2012
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Sumitomo Electric Device Innovations USA Inc. (SEDU) will be showing its full line of GaN HEMTs at this year’s MTT-S IMS 2012 Show in Montreal. 

Featured will be its latest GaN devices for radar. The devices are designed for L/S/X-Band Radar applications.Sumitomo Electric is leading the way with a 2.9-3.3 GHz 600W discrete S-band transistor. A 600W 50 ohm pallet version is also available. For broadband radar, Sumitomo offers a 2.9 – 3.5 GHz 300W transistor. These devices offer operation for short pulse and long pulse.     

Sumitomo Electric is demonstrating the 600W S-band and the 100W X-band transistor operation at the MTT-s show. Please see a demonstration at our booth #2003

Recent Articles by Sumitomo Electric Device Innovations USA Inc., San Jose, Calif.

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