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Aerospace and Defense Channel / Industry News

SEDU announces next generation GaN HEMT for L- and S-Band space applications

June 14, 2012
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Sumitomo Electric Device Innovations USA Inc. (SEDU) will be featuring its enhanced line of GaN HEMTs for satellite applications at the International Microwave Symposium (IMS) 2012 show in Montreal.  

Featured will be GaN HEMT devices for L/S-band applications that offer high efficiency, ease of matching, greater consistency and broad bandwidth with 50 V operation and higher gain than competing power transistor solutions. Sumitomo’s space level Quality Assurance Program assures the highest reliability and consistent performance for space grade level product. This product family is in production and shipping to multiple customers. Sumitomo is also developing a 100 W unmatched device for the UHF band.  

Sumitomo Electric was first to market with L/S-Band discrete HEMT deviceswith 100W of output powerfor space use. These GaN devices cover frequencies up to 2.5 GHz with output power ranging from 4 to 100W. Sumitomo Electric is the market leader for GaN devices for space applications. Combining advanced technological leadership with over 30 years of design, development and manufacturing demonstrates that Sumitomo Electric is committed to the space market. The products will be on display at the IMS 2012 show in Montreal. Please visit us at Sumitomo Electric’s booth #2003.    

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