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Cellular 4G/LTE Channel

GaAs MMIC LNAs: CMD157 / CMD157P3

June 8, 2012
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CMD157P3 ImageCustom MMIC, (www.CustomMMIC.com), a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering two new devices from its growing MMIC design library. The CMD157 (die) and CMD157P3 (packaged) are GaAs MMIC low-noise amplifiers (LNAs) for applications from 6 to 18 GHz. These broadband devices each boast an impressively low noise figure of 1.5 dB, deliver greater than 25 dB of flat gain, and have a corresponding output 1 dB compression point of +10 dBm.

Both the CMD157 and the CMD157P3 are 50 Ohm matched designs, thus eliminating the need for external DC blocks and RF port matching. The CMD157 is suitable for chip-and-wire applications, whereas the CMD157P3 is housed in a leadless RoHS compliant 3x3 mm plastic surface mount package. The amplifiers are biased with a single positive voltage of +3.0 V at 52 mA. RF power can be applied at any time.

These LNAs are much smaller, lower-cost alternatives to hybrid amplifiers in this frequency range. Ideally suited for broadband EW and communication systems, where small size and low power consumption are needed, the CMD157 and the CMD157P3 can also be used in low noise downconverters, microwave radio receiver systems, and radar receivers.

For full datasheets on the CMD157 and CMD157P3 GaAs MMIC LNA, visit the company's web site.

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