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Industry News

Cree to provide information on new high power GaN IM FETs at X-Band while exhibiting at IMS 2012

May 31, 2012
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Cree is gearing up for the 2012 International Microwave Symposium with plans to showcase the latest in GaN-on-SiC technology. Several IMS panel sessions will feature Cree speakers, who will discuss everything from the emerging RF market opportunities for GaN to cellular infrastructure future markets.

We have new GaN-on-SiC IM FETs at 50W and 100W, matched to 50-ohms, for X-Band applications. The series includes devices for satellite, linear communications (CGHV96050F1, CGHV96100F1) as well as X-Band radar applications (CGHV96050F2, CGHV96100F2).

  • Download the Satcom data sheets: www.cree.com/rf/applications/rf-applications/satcom-and-point-to-point-radio
  • Download the Radar data sheets: www.cree.com/rf/applications/rf-applications/radar

 

X-Band Satcom

Linear Output Power

X-Band Radar

Pulsed Output Power

CGHV96050F1

20 W

CGHV96050F2

50 W

CGHV96100F1

50 W

CGHV96100F2

100 W

 
  • See Jim Milligan from Cree at a Special Panel Session at IMS 2012 on Wednesday, June 20
    • Room 516
    • "Where are the emerging RF market opportunities for GaN?"
    • Read more here: www.microwavejournal.com/articles/17403-where-are-the-emerging-rf-market-opportunities-for-gan-
  • See Ray Pengelly from Cree at the Cellular Infrastructure Panel Session at IMS 2012 on Wednesday, June 20
    • Room 516 AC
    • "How will LDMOS and III-V device technologies play in cellular infrastructure future markets?"
    • Read more here: http://ims2012.mtt.org/files/Program_Book_Final.pdf

Recent Articles by Cree Inc., Research Triangle Park, NC

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