- Buyers Guide
Military Microwaves Supplement
Richardson RFPD Inc. today announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. The two linear power amplifiers are the latest additions to Freescale's extensive range of GaAs MMICs optimized for wireless infrastructure applications. Designed to streamline development for today's demanding 3G and 4G networks, the amplifiers are ideally suited for small cell applications, including Femtocell and Picocell, as well as macro cell base stations, tower mount amplifiers (TMA), remote radio heads (RRH) and repeaters. Both devices are housed in cost-effective, surface mount QFN plastic packages.
The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz such as code division multiple access (CDMA), global system for mobile communications (GSM), long term evolution (LTE) and ZigBee® with 3 to 5 V supply.
Key features of the MMZ09312B include:
Also available in Tape and Reel: T1 Suffix = 1,000 Units, 12 mm tape width, 7 inch reel
The MMZ25332B is a high efficiency InGaP HBT amplifier that is suitable for 2400 MHz ISM applications, WLAN (802.11g), WiBro (802.11b), WiMAX (802.16e), W-CDMA, TD-SCDMA, LTE and wireless broadband mesh networks applications with frequencies from 1800 to 2800 MHz using simple external matching components with 3 to 5 V supply.
Key features of the MMZ25332B include:
Both parts are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the Freescale GaAs MMICs webpage. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support.
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