TriQuint Semiconductor Inc. announced that it has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high-frequency and mixed signal integrated circuits (ICs) based on TriQuint gallium nitride (GaN) technology. The CRADA is designed to accelerate new programs supporting communications, radar, electronic warfare and similar applications.

The CRADA will give Army researchers dedicated access to TriQuint’s development, fabrication and packaging expertise. Researchers from both TriQuint and the ARL will benefit from the new co-development environment. Circuits created as part of the initiative are expected to be based on TriQuint’s new E/D (enhancement-depletion mode) GaN technology.

The new agreement leverages technology TriQuint created through on-going R&D programs. This GaN process has been utilized in Defense Advanced Research Projects Agency (DARPA) initiatives, including the Nitride Electronic NeXt-Generation (NEXT) program that TriQuint now leads. Through NEXT, TriQuint continues to establish benchmark performance standards for mixed-signal (digital and RF) devices. TriQuint GaN achievements also led to its selection as a prime contractor in the Microscale Power Conversion (MPC) program that is developing ultra-fast, high power DC-DC switch modulator technology for advanced integrated RF amplifiers. TriQuint’s role in MPC was recognized by Compound Semiconductor magazine on March 12 with a 2012 CS Industry Award.

“Creative partnerships through Cooperative Research and Development Agreements encourage outside businesses and university organizations to share in the discovery of and investment in technologies. In this case, ARL is leveraging industrial fabrication capabilities allowing ARL to maximize its return on investment,” said John Miller, Army Research Laboratory Director. “These advanced IC processes, coupled with ARL’s design expertise, could lead to innovations and advancements in both military and consumer applications in communications, radar and electronic warfare.”

“TriQuint’s gallium nitride research leads the industry. This new CRADA is another example of ways that our work in one program benefits other DoD agencies and service branches. We will provide access to our extensive development capabilities and the ARL will provide designs and test circuits in support of their advanced programs,” said James L. Klein, TriQuint Vice President and General Manager for Defense Products and Foundry Services.

TriQuint’s new agreement with the ARL is designed to stimulate high performance monolithic microwave integrated circuit (MMIC) development. The ARL’s design and testing capabilities will be leveraged with TriQuint’s MMIC fabrication, testing and packaging expertise. Both TriQuint and ARL researchers will work towards identifying circuits of mutual interest that have the potential to advance state-of-the-art design programs.

TriQuint has been a pioneer in GaN development and research since 1999. TriQuint currently leads multiple GaN process and manufacturing technology programs for DARPA, the US Air Force, Army and Naval laboratories including the Defense Production Act Title III manufacturing enhancement program. TriQuint has also led two other DARPA programs that were part of the Wide Bandgap Semiconductor (WBGS) RF research initiative.

TriQuint Gallium Nitride Product Innovation, Honors & Resources:



Leader in defense and commercial GaN research since 1999


Leader in performance and reliability GaN development

University Partners

Massachusetts Institute of Technology, University of Notre Dame and

University of Colorado at Boulder

The Global GaN Impact

Strategy Analytics recognizes TriQuint’s GaN R&D/GaN Product Innovation

Active R&D programs

DARPA NEXT program for highly complex, high frequency GaN MMICs


Defense Production Act (DPA) Title III program for GaN on SiC; Radar and

EW MMICs: Air Force and Navy sponsors


DARPA Microscale Power Conversion program to develop ultra-fast power

switch technology and integrate technology into next-generation amplifiers


DARPA Near Junction Thermal Transport (NJTT) GaN program to increase

circuit power handling capabilities through enhanced thermal management

Recent Honors

2011 ‘Compound Semiconductor’ CS Industry Award for DARPA NEXT;

2012 CS Industry Award for DARPA MPC program

GaN Products

Wide selectionof innovative GaN amplifiers, transistors and switches

GaN Foundry

0.25-micron GaN on SiC; 100mm wafers; DC-18 GHz applications