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RF Power Transistor: T1G4005528-FS

March 7, 2012
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Triquint-55W-GaNRichardson RFPD Inc. announces availability and full design support capabilities for a 28-volt, 55 W, GaN on SiC HEMT, RF power transistor from TriQuint Semiconductor. The T1G4005528-FS provides 55 W RF output power (P3 dB), with greater than 15 dB of linear gain, and better than 50% drain efficiency at 3.5 GHz. 

The T1G4005528-FS is ideal for narrowband and wideband applications, offering exceptional performance from DC to 3.5 GHz. The T1G4005528-FS is available in an industry standard, flangeless ceramic package. Power, gain, and efficiency can be optimized for a particular application with simple matching networks external to the device. Applications for the T1G4005528-FS include military and civilian radar, commercial/military radio communications systems, test instrumentation, avionics, plus high-performance wideband or narrowband RF power amplifiers. 

 Key features of the T1G4005528-FS operating at 3.5 GHz include:

• Linear Gain: > 15 dB
• Output Power (P3dB): 55W
• Drain Efficiency: >50%
• Thermal Resistance, junction to case, ΘJC = 2.1 °C/W
• Typical Bias: 28V drain supply, 200mA drain quiescent current, -3.5V gate supply
• Package Size: 9.7mm x 5.8mm x 3.5mm (industry standard; flangeless)
• RoHS Compliant 

The device is constructed with TriQuint’s proven 0.25μm GaN on SiC HEMT production process, which features advanced field plate techniques to optimize both power and efficiency at high drain bias operating conditions. This optimization can lower overall system cost in terms of fewer amplifiers required in the line-up (for a given output power level) and lower thermal management costs. 

To find more information, or to purchase this product today on the Richardson RFPD website, please visit the T1G4005528-FS product webpage. 

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