Richardson RFPD, Inc. announces availability of four new high-linearity driver amplifiers from TriQuint Semiconductor. These InGaP / GaAs HBT semiconductor devices deliver high performance across a broad range of frequencies. The TQP7M9101, TQP7M9102, TQP7M9103 and TQP7M9104 are targeted for use in 3G / 4G wireless infrastructure, general purpose wireless, and aerospace & defense systems where high linearity, medium power, and high efficiency are required.
This rare combination of high performance makes these devices excellent driver amplifier candidates for both current and next-generation RF transceiver applications.
These innovative RF solutions incorporate on-chip features that differentiate them from other similar products in the market. Each of these amplifiers integrates on-chip DC over-voltage and RF overdrive protection. This feature protects the amplifiers from electrical DC voltage surges and high RF input power levels that may occur in a system. In addition, specially designed on-chip ESD protection allows the amplifiers to have very robust Class 2 (TQP7M9103, TQP7M9102 and TQP7M9103) and Class 1C (TQP7M9104) HBM ESD ratings.
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