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RF Micro Devices, Inc. announced it has secured a reference design win for its second-generation ultra-high efficiency family of power amplifiers. The new reference design win is on a highly integrated multimode multi-band 3G/LTE solution.
Eric Creviston, president of RFMD’s Cellular Products Group (CPG), said, “We are excited to expand our relationship with this leading chipset supplier to include our ultra-high efficiency 3G/4G power amplifiers. RFMD is already supporting our mutual customers with high-performance 3G/4G switches and switch-based products, and we are enthusiastic about the incremental growth opportunities presented by our increasing participation on 3G and LTE reference designs.”
RFMD’s second-generation ultra-high efficiency 3G and 4G LTE PAs deliver an enhanced user experience by extending battery life and reducing the thermal impact of data usage in smartphones. The product family currently covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21 – addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations. Additional multimode, multi-band (MMMB) and single-mode LTE variants will be introduced in the first half of calendar 2012.
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