GaAsMMICamp-1022Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announces the release of a new wideband GaAs pHEMT MMIC distributed power amplifier die which is ideal for military EW, test & measurement equipment, and broadband telecom equipment applications up to 48 GHz.

The HMC1022 is a 0.25 W GaAs pHEMT MMIC distributed power amplifier which operates between DC and 48 GHz. The amplifier provides 12 dB of gain, +32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while consuming only 150 mA from a +10 V supply. The HMC1022 exhibits a slightly positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, Radar and test equipment applications.

The HMC1022 is offered in bare die form and features RF I/Os which are internally matched to 50 Ohms. Requiring only a few external bias decoupling components, the HMC1022 Wideband Distributed Amplifier was developed for simplified integration into Multi-Chip-Modules (MCMs) and other higher level assemblies and subsystems. The HMC1022 complements Hittite’s broad line of distributed low noise, driver, and power amplifiers, with frequency coverage up to 65 GHz.

Samples are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.

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