Channels, Propagation and Antennas for Mobile Communications
The Institution of Electrical Engineers
784 pages; $145, £89
ISBN: 0-85296-084-0
This book introduces the principles, theory and applications of physical layer wireless/mobile communications where antennas, propagation and the radio channel used are interrelated. It offers an explanation of that relationship which is fundamental to the development of systems with high spectral efficiency. The basic principles needed to establish an understanding of that technology are emphasized, but the tools required — such as mathematics and statistics —are treated in the manner of a practical handbook, avoiding detailed derivations. Chapter 1 introduces the concepts with a brief look at a century of developments, which, from the start, have featured non-line-of-sight paths. The basic effects of the multipath propagation on digital communications links are also introduced. Chapters 2 to 5 cover propagation and scattering mechanisms, in particular the multipath statistical relations for the short-term multipath; the scattering mechanisms of reflection, rough surface scattering and diffraction; and their experimental analysis and effects. The propagation modeling includes both the short-term (standing wave) effects and the long-term (shadow and space loss) effects. Chapters 5 to 7 cover short-term multipath channel behavior. These chapters draw on simple propagation models with signal processing concepts. Chapters 8 and 9 concern the principles and design of antennas. It starts with the basics of element theory, antenna and polarization parameters and ground plane effects. The analysis and design of diversity antennas follows, including a variety of examples. This leads to antenna arrays for multipath environments, including transmit and receive diversity, and MIMO (multiple input, multiple output) systems.
This book is a valuable reference for senior undergraduates and postgraduates in electrical engineering and communications. Practicing design engineers and engineering managers will also gain a sound understanding of the field.
To order this book, contact: Books International, P.O. Box 605, Hemdon, VA 20172 (703) 661-1573; or IEE, P.O. Box 96, Stevenage SG1 2SD UK +44 (0) 1438 767328.
Silicon-Germanium Heterojunction Bipolar Transistors
Artech House Inc.
585 pages; $119, £83
ISBN: 1-58053- 361-2
This book is intended for different audiences. It should prove useful as a hands-on reference for practicing engineers and scientists working on various aspects of SiGe technology, as a text book for graduate or advanced undergraduate students who are interested in integrated circuits device and circuits technologies, or as a reference for technical managers and technical support/sales personnel in the semiconductor industry. The book is intentionally very broad as well as very deep, and proceeds from a basic motivation and history of the subject, to materials, technology and fabrication issues, and a detailed discourse on a wide range of fundamental aspects of SiGe HBT operation and design, spanning DC and AC characteristics, including noise and linearity. These fundamental topics are then supplemented by a closer look at some fine points, which might be confronted by experts in the field, including second-order phenomena, temperature effects, radiation tolerance and numerical simulation.
Chapter 1 is an introduction to the subject of SiGe technology. Chapter 2 considers SiGe strained-layer epitaxy. SiGe BiCMOS technology is described in Chapter 3. The static characteristics of SiGe HBTs are covered in Chapter 4, while the dynamic characteristics are the subject of Chapter 5. Chapter 6 is dedicated to second-order phenomena, such as Ge grading effects, neutral base recombination and heterojunction barrier effects. In Chapter 7, the noise properties of SiGe HBTs are described, including analytical modeling. Linearity, nonlinearity concepts and Volterra series are covered in Chapter 8. Chapter 9 considers temperature effects and their impact on HBTs. Other design issues, SiGe pnp HBTs, arbitrary band alignments and Ge-induced collector-base field effects are described in Chapter 10. Chapter 11 is dedicated to radiation tolerance and Chapter 12 introduces device simulation, including semiconductor equations, application issues and probing internal device operation.
To order this book, contact: Artech House Inc., 685 Canton St., Norwood, MA 02062 (781) 769-9750 ext. 4030; or 46 Gillingham St., London SW1V 1HH UK +44 (0) 207-8750.