GaN RF Power Transistor
TriQuint is proud to announce a new packaged GaN discrete RF power transistor, the T1G4005528-FS. It offers more than 55 Watts of compressed output power and greater than 50% efficiency optimized for the 3.1-3.5GHz band.
The innovative new T1G4005528-FS is ideal for narrow and wideband applications, offering exceptional performance from DC to 3.5 GHz. The T1G4005528-FS offers >14 dB of linear gain at 3.3 GHz and operates at 28 V; it is available in an earless ceramic package. Power, gain, and efficiency can be optimized for a particular application with simple matching networks external to the device. Applications for the T1G4005528-FS include military and civilian radar, professional and military radio communications systems, test instrumentation, avionics and wideband or narrowband amplifiers.
Samples will be available in the third quarter. Contact TriQuint Product Marketing for sample requests and further information via the company’s website by clicking the link below our logo on this page.